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* Set Each and every capacitor into a startup volt degree (if possible) so you don't need to observe & await that capacitor to charge up to ordinary functioning voltage.
So can anyone you should describe how FET with low threshold voltage has better speed and better leakage existing while FET with substantial threshold will likely be gradual but lower on power?
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In the event of lvt, conc. of doping and oxide thickness is a lot more compare to hvt.. And this The explanation that far more the doping, so extra velocity and more leakage Examine to hvt.
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